silicon planar epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5514 issue 3 page 1 of 3 BUX77 ? high power ? hermetic to-66 metal package ? ideally suited for driver circuits, switching and amplifier applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 100v v ceo collector ? emitter voltage 80v v ebo emitter ? base voltage 6v i c continuous collector current 5a i b base current 0.8a p d total power dissipation at t c = 25c 40w derate above 25c 0.23w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 4.4 c/w
silicon planar epitaxial npn transistor BUX77 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5514 issue 3 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols param eters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 50ma i b = 0 80 v (br)ces collector-emitter breakdown voltage i c = 2ma v be = 0 100 v (br)ebo emitter-base breakdown voltage i e = 1.0ma i c = 0 6 v i ceo collector cut-off current v ce = 60v i b = 0 10 v cb = 80v i e = 0 0.5 i cbo collector cut-off current t c = 150c 150 i ebo emitter cut-off current v eb = 4v i c = 0 0.5 a i c = 0.5a v ce = 5v 50 i c = 2a v ce = 5v 50 120 i c = 5a v ce = 5v 30 i c = 1.0a v ce = 5v h fe (1) forward-current transfer ratio t c = -40c 25 v ce(sat) (1) collector-emitter saturation voltage i c = 5a i b = 0.5a 1.0 v be(sat) (1) base-emitter saturation voltage i c = 5a i b = 0.5a 1.3 v dynamic characteristics i c = 0.5a v ce = 5v |h fe | small signal forward-current transfer ratio f = 20mhz 1.5 i c = 5a v cc = 40v t on turn-on time i b1 = 0.5a 0.3 0.4 i c = 5a v cc = 40v t off turn-off time i b1 = - i b2 = 0.5a 1.1 2.5 s notes notes notes notes (1) pulse width 300us, 2%
silicon planar epitaxial npn transistor BUX77 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 5514 issue 3 page 3 of 3 mechanical data dimensions in mm (inches) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 0.71 (0.028) 0.86 (0.034) 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 11.94 (0.470) 12.70 (0.500) 1 2 to66 (to - 213aa) pin 1 - base pin 2 - emitter case - collector
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